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1SS306(TE85L,F) Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
1SS306(TE85L,F)TOSHIBA145400Yes

SS306(TE85L,F)** is a semiconductor device manufactured by **TOSHIBA**.

The SS306(TE85L,F) is a semiconductor device manufactured by TOSHIBA. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: PNP Silicon Epitaxial Planar Transistor
  • Package: SOT-23 (Miniature Surface-Mount Package)
  • Collector-Base Voltage (VCBO): -50V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -500mA (DC)
  • Total Power Dissipation (PT): 150mW
  • Junction Temperature (Tj): 150°C
  • Storage Temperature (Tstg): -55°C to +150°C

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • Suitable for low-power, high-speed circuits.
  • Compact SOT-23 package ideal for space-constrained PCB designs.

Features:

  • High Voltage Capability: Supports up to -50V collector-emitter voltage.
  • Low Saturation Voltage: Ensures efficient switching performance.
  • High Current Gain (hFE): Provides good amplification characteristics.
  • Surface-Mount Design: Optimized for automated assembly processes.

For detailed electrical characteristics and application notes, refer to the official TOSHIBA datasheet.

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