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2SC2712-Y(TE85L,F) Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC2712-Y(TE85L,F)TOSHIBA258000Yes

2SC2712-Y(TE85L,F)** is a high-frequency NPN transistor manufactured by **TOSHIBA**.

The 2SC2712-Y(TE85L,F) is a high-frequency NPN transistor manufactured by TOSHIBA. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN
  • Maximum Collector-Base Voltage (VCB): 30V
  • Maximum Collector-Emitter Voltage (VCE): 20V
  • Maximum Emitter-Base Voltage (VEB): 5V
  • Maximum Collector Current (IC): 100mA
  • Total Power Dissipation (PT): 150mW
  • Transition Frequency (fT): 600MHz (typical)
  • DC Current Gain (hFE): 120 - 560 (at VCE = 6V, IC = 1mA)
  • Noise Figure (NF): 2dB (typical at f = 1kHz, IC = 1mA, VCE = 6V)
  • Operating Temperature Range: -55°C to +150°C

Package Type:

  • SOT-23 (Miniature Surface-Mount Package)

Descriptions & Features:

  • Designed for high-frequency amplification in RF and VHF applications.
  • Low noise performance, making it suitable for small-signal amplification in communication circuits.
  • High transition frequency (fT) ensures good performance in high-speed switching applications.
  • Compact SOT-23 package allows for space-efficient PCB designs.
  • Commonly used in RF amplifiers, oscillators, and mixer circuits.

This transistor is optimized for low-power, high-frequency applications in consumer electronics and communication devices.

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