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2SC2881-Y(TE12L,CF Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC2881-Y(TE12L,CFTOSHIBA19000Yes

2SC2881-Y(TE12L,CF)** is a high-frequency NPN bipolar junction transistor (BJT) manufactured by **TOSHIBA**.

The 2SC2881-Y(TE12L,CF) is a high-frequency NPN bipolar junction transistor (BJT) manufactured by TOSHIBA. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN
  • Maximum Collector-Base Voltage (VCB): 30V
  • Maximum Collector-Emitter Voltage (VCE): 15V
  • Maximum Emitter-Base Voltage (VEB): 3V
  • Maximum Collector Current (IC): 50mA
  • Power Dissipation (PC): 150mW
  • Transition Frequency (fT): 6GHz (Typical)
  • Noise Figure (NF): 1.5dB (Typical at 1GHz)
  • DC Current Gain (hFE): 30 to 200 (at VCE = 5V, IC = 10mA)
  • Operating Temperature Range: -55°C to +150°C

Package:

  • Package Type: SOT-323 (SC-70)

Descriptions & Features:

  • Designed for high-frequency amplification in RF applications.
  • Suitable for low-noise amplifiers (LNA), VHF/UHF amplifiers, and microwave circuits.
  • High transition frequency (fT) for excellent high-frequency performance.
  • Low noise figure (NF) makes it ideal for sensitive RF signal processing.
  • Compact SOT-323 package for space-constrained PCB designs.
  • Commonly used in wireless communication devices, mobile phones, and RF modules.

This transistor is optimized for low-power, high-frequency applications where signal integrity and noise performance are critical.

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