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2SC4116-GR(TE85L,F Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC4116-GR(TE85L,FTOSHIBA6000Yes

2SC4116-GR(TE85L,F)** is a high-frequency NPN bipolar junction transistor (BJT) manufactured by **TOSHIBA**.

The 2SC4116-GR(TE85L,F) is a high-frequency NPN bipolar junction transistor (BJT) manufactured by TOSHIBA. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN
  • Maximum Collector-Base Voltage (VCB): 30V
  • Maximum Collector-Emitter Voltage (VCE): 15V
  • Maximum Emitter-Base Voltage (VEB): 3V
  • Maximum Collector Current (IC): 50mA
  • Power Dissipation (PD): 150mW
  • Transition Frequency (fT): 6GHz (typical)
  • Noise Figure (NF): 1.2dB (typical at 2GHz)
  • DC Current Gain (hFE): 40 to 200
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-343 (SC-70)

Descriptions:

  • Designed for high-frequency amplification in RF applications.
  • Suitable for low-noise, high-gain circuits in wireless communication systems.
  • Compact SOT-343 package for space-constrained designs.

Features:

  • High fT (6GHz) for RF and microwave applications.
  • Low noise figure (1.2dB @ 2GHz) for improved signal integrity.
  • Small form factor (SOT-343) for high-density PCB layouts.
  • Optimized for VHF/UHF and microwave frequency ranges.

This transistor is commonly used in RF amplifiers, oscillators, and low-noise signal processing circuits.

For detailed electrical characteristics, refer to the TOSHIBA datasheet.

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