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2SK880-GR(TE85L,F) Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SK880-GR(TE85L,F)TOSHIBA95947Yes

part 2SK880-GR(TE85L,F)** is a **N-channel MOSFET** manufactured by **TOSHIBA**.

The part 2SK880-GR(TE85L,F) is a N-channel MOSFET manufactured by TOSHIBA. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: N-channel MOSFET
  • Drain-Source Voltage (VDSS): 30V
  • Gate-Source Voltage (VGSS): ±20V
  • Drain Current (ID): 3A (continuous)
  • Power Dissipation (PD): 1W
  • On-Resistance (RDS(on)): 85mΩ (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 1.0V (min) to 2.5V (max)
  • Input Capacitance (Ciss): 300pF (typical)
  • Output Capacitance (Coss): 90pF (typical)
  • Reverse Transfer Capacitance (Crss): 30pF (typical)
  • Turn-On Delay Time (td(on)): 10ns (typical)
  • Turn-Off Delay Time (td(off)): 35ns (typical)
  • Package: SOT-23F (Super Mini Mold)

Descriptions:

  • Designed for low-voltage, high-speed switching applications.
  • Suitable for power management, DC-DC converters, and load switching.
  • Compact SOT-23F package for space-constrained designs.

Features:

  • Low On-Resistance (RDS(on)) for efficient power handling.
  • Fast switching speed for high-frequency applications.
  • Low threshold voltage for compatibility with logic-level signals.
  • Compact and lightweight package for portable electronics.

For detailed datasheet information, refer to TOSHIBA's official documentation.

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