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33010 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
33010TOSHIBA302Yes

Part Number:** 33010 **Manufacturer:** TOSHIBA ### **Specifications:** - **Type:** Power MOSFET - **Technology:** N-Channel - **Drain-Source Voltage (VDS):** 60V - **Continuous Drain Current (ID):** 30A - **Pulsed Drain Current (IDM):** 1

Part Number: 33010

Manufacturer: TOSHIBA

Specifications:

  • Type: Power MOSFET
  • Technology: N-Channel
  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current (ID): 30A
  • Pulsed Drain Current (IDM): 120A
  • Power Dissipation (PD): 50W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 0.025Ω (max) @ VGS = 10V
  • Threshold Voltage (VGS(th)): 2.0V (min) – 4.0V (max)
  • Input Capacitance (Ciss): 1500pF (typ)
  • Output Capacitance (Coss): 600pF (typ)
  • Reverse Transfer Capacitance (Crss): 100pF (typ)
  • Switching Speed: Fast
  • Package: TO-220AB

Descriptions:

The TOSHIBA 33010 is an N-Channel power MOSFET designed for high-efficiency switching applications. It features low on-resistance and fast switching characteristics, making it suitable for power management in DC-DC converters, motor control, and other high-current applications.

Features:

  • Low RDS(on) for reduced conduction losses
  • High-speed switching performance
  • Enhanced avalanche ruggedness
  • Low gate charge for improved efficiency
  • TO-220AB package for easy mounting and heat dissipation
  • RoHS compliant

This MOSFET is ideal for applications requiring high power handling and efficiency in a compact form factor.

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