Professional IC Distribution & Technical Solutions

Global leader in semiconductor components distribution and technical support services, empowering your product innovation and industry advancement

Product Catalog Contact Us
Home > TOSHIBA05 > 33010

33010 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
33010TOSHIBA302Yes

Part Number:** 33010 **Manufacturer:** TOSHIBA ### **Specifications:** - **Type:** Power MOSFET - **Technology:** N-Channel - **Drain-Source Voltage (VDS):** 60V - **Continuous Drain Current (ID):** 30A - **Pulsed Drain Current (IDM):** 1

Part Number: 33010

Manufacturer: TOSHIBA

Specifications:

  • Type: Power MOSFET
  • Technology: N-Channel
  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current (ID): 30A
  • Pulsed Drain Current (IDM): 120A
  • Power Dissipation (PD): 50W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 0.025Ω (max) @ VGS = 10V
  • Threshold Voltage (VGS(th)): 2.0V (min) – 4.0V (max)
  • Input Capacitance (Ciss): 1500pF (typ)
  • Output Capacitance (Coss): 600pF (typ)
  • Reverse Transfer Capacitance (Crss): 100pF (typ)
  • Switching Speed: Fast
  • Package: TO-220AB

Descriptions:

The TOSHIBA 33010 is an N-Channel power MOSFET designed for high-efficiency switching applications. It features low on-resistance and fast switching characteristics, making it suitable for power management in DC-DC converters, motor control, and other high-current applications.

Features:

  • Low RDS(on) for reduced conduction losses
  • High-speed switching performance
  • Enhanced avalanche ruggedness
  • Low gate charge for improved efficiency
  • TO-220AB package for easy mounting and heat dissipation
  • RoHS compliant

This MOSFET is ideal for applications requiring high power handling and efficiency in a compact form factor.

Request Quotation

Part Number:
Quantity:
Target Price($USD):
Email:
Contact Person:
Additional Part Number
Quantity (Additional)
Special Requirements
Verification: =

Recommended Products

  • TBD62083AFNG(Z,EL) ,6000,SSOP-18年份：22+

    TBD62083AFNG(Z,EL)** is a high-voltage, high-current Darlington transistor array manufactured by **Toshiba**.

  • TC7S08FU(TE85L,F) ,75000,SOT-353年份：22+

    TC7S08FU(TE85L,F)** is a logic gate IC manufactured by **TOSHIBA**.

  • TLP5702(TP,E(T ,1500,SOP-6年份：22+

    TLP5702(TP,E(T)** is a high-speed photocoupler (optocoupler) manufactured by **TOSHIBA**.

  • LH1263AE,ATGT,22,DIP20

    CTS8028,CTS,22,DIP16

Sales Support

Our sales team is ready to assist with:

  • Fast quotation
  • Price Discount
  • Technical specifications
Contact sales