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Detailed technical information and Application Scenarios
| PartNumber | Manufactor | Quantity | Availability |
|---|---|---|---|
| TL8608P | TOSHIBA | 146 | Yes |
The TL8608P is a semiconductor device manufactured by Toshiba. Below are the factual specifications, descriptions, and features of the part:
#### Description:
The TL8608P is a P-channel MOS FET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power switching applications.
#### Key Features:
#### Applications:
#### Package Type:
For detailed electrical characteristics and application notes, refer to the official Toshiba datasheet.
Part Number:** SS181,LF(T) **Manufacturer:** TOSHIBA ### **Specifications:** - **Type:** Schottky Barrier Diode - **Configuration:** Single diode - **Maximum Repetitive Peak Reverse Voltage (VRRM):** 80V - **Maximum Average Forward Current
TA7204P** is an integrated circuit (IC) manufactured by **Toshiba**.
Manufacturer:** TOSHIBA **Part Number:** TC220E1803EF-01 ### **Specifications:** - **Type:** IGBT (Insulated Gate Bipolar Transistor) Module - **Voltage Rating:** 1800V - **Current Rating:** 220A - **Configuration:** Single switch or half-
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