Professional IC Distribution & Technical Solutions

Global leader in semiconductor components distribution and technical support services, empowering your product innovation and industry advancement

Product Catalog Contact Us
Home > TOSHIBA05 > TPCC8105,L1Q(CO

TPCC8105,L1Q(CO Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
TPCC8105,L1Q(COTOSHIBA10000Yes

TPCC8105,L1Q(CO)** is a semiconductor device manufactured by **TOSHIBA**.

The TPCC8105,L1Q(CO) is a semiconductor device manufactured by TOSHIBA. Below are its specifications, descriptions, and features based on available data:

Specifications:

  • Manufacturer: TOSHIBA
  • Part Number: TPCC8105,L1Q(CO)
  • Type: Power MOSFET or IGBT (exact type may vary based on application)
  • Package: Likely a surface-mount or through-hole package (specific package details may vary)
  • Voltage Rating: Dependent on variant (exact value not specified in public datasheets)
  • Current Rating: Dependent on variant (exact value not specified in public datasheets)
  • Application: Power switching, motor control, or inverter circuits (common in TOSHIBA power devices)

Descriptions:

  • The TPCC8105,L1Q(CO) is a power semiconductor device designed for high-efficiency switching applications.
  • It is part of TOSHIBA’s lineup of power transistors, possibly optimized for low-loss and high-speed operation.
  • Suitable for industrial, automotive, or consumer electronics where power management is critical.

Features:

  • Low On-Resistance (RDS(ON)): Ensures minimal power loss during conduction.
  • High-Speed Switching: Optimized for fast switching applications.
  • Robust Thermal Performance: Designed to handle high power dissipation.
  • Reliability: Manufactured under TOSHIBA’s stringent quality standards.

For exact electrical characteristics, refer to the official TOSHIBA datasheet or contact authorized distributors.

Request Quotation

Part Number:
Quantity:
Target Price($USD):
Email:
Contact Person:
Additional Part Number
Quantity (Additional)
Special Requirements
Verification: =

Recommended Products

  • HN1C01FE-Y,LF(T ,160000,SOT-363年份：18+/19+

    ### Manufacturer: Toshiba ### Part Number: HN1C01FE-Y,LF(T) #### Specifications: - **Type**: Schottky Barrier Diode - **Configuration**: Single - **Voltage - DC Reverse (Vr) (Max)**: 40V - **Current - Average Rectified (Io)**: 1A - **Volta

  • TA8110AP ,300,DIP16

    TA8110AP is an integrated circuit (IC) manufactured by Toshiba.

  • 1SS193(TE85L,F) ,39000,SOT-23年份：21+

    SS193(TE85L,F)** is a PNP silicon epitaxial planar transistor manufactured by **TOSHIBA**.

  • LS125A,HIT,69,SOP14

    2SK3306,NEC,69,TO220F

Sales Support

Our sales team is ready to assist with:

  • Fast quotation
  • Price Discount
  • Technical specifications
Contact sales