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UT3N01ZG-AL3-R Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
UT3N01ZG-AL3-RUTC 365900Yes

UT3N01ZG-AL3-R is a semiconductor component manufactured by UTC (Unisonic Technologies Co.

The UT3N01ZG-AL3-R is a semiconductor component manufactured by UTC (Unisonic Technologies Co., Ltd.). Below are the factual specifications, descriptions, and features of this part:

Manufacturer: UTC (Unisonic Technologies Co., Ltd.)

Part Number: UT3N01ZG-AL3-R

Type: N-Channel Enhancement Mode MOSFET

Key Specifications:

  • Drain-Source Voltage (VDSS): 30V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): 3A
  • Pulsed Drain Current (IDM): 12A
  • Power Dissipation (PD): 1.4W
  • On-Resistance (RDS(ON)): 50mΩ (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 1.0V to 2.5V
  • Input Capacitance (Ciss): 300pF (typical)
  • Output Capacitance (Coss): 70pF (typical)
  • Reverse Transfer Capacitance (Crss): 25pF (typical)

Package:

  • Type: SOT-23 (Small Outline Transistor)
  • Pins: 3

Features:

  • Low on-resistance for improved efficiency
  • Fast switching speed
  • High power and current handling in a compact package
  • Suitable for power management and switching applications

Applications:

  • DC-DC converters
  • Power management circuits
  • Load switching
  • Battery protection circuits
  • Motor control

This information is based on the manufacturer's datasheet and technical documentation. For detailed performance characteristics, refer to the official UTC datasheet.

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