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2N7002K-T1-GE3 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2N7002K-T1-GE3VISHAY96693Yes

2N7002K-T1-GE3** is a N-channel MOSFET manufactured by **VISHAY**.

The 2N7002K-T1-GE3 is a N-channel MOSFET manufactured by VISHAY. Below are its key specifications, descriptions, and features:

Specifications:

  • Drain-Source Voltage (VDS): 60V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): 115mA
  • Pulsed Drain Current (IDM): 800mA
  • Power Dissipation (PD): 200mW
  • On-Resistance (RDS(on)): 5Ω (max) @ VGS = 10V, ID = 50mA
  • Threshold Voltage (VGS(th)): 1V (min), 2.5V (max)
  • Input Capacitance (Ciss): 50pF (typical)
  • Output Capacitance (Coss): 10pF (typical)
  • Reverse Transfer Capacitance (Crss): 5pF (typical)
  • Turn-On Delay Time (td(on)): 10ns (typical)
  • Turn-Off Delay Time (td(off)): 30ns (typical)
  • Operating Temperature Range: -55°C to +150°C

Description:

The 2N7002K-T1-GE3 is a small-signal MOSFET designed for low-power switching applications. It is housed in a SOT-23 package, making it suitable for space-constrained designs.

Features:

  • Low Threshold Voltage: Ensures compatibility with logic-level signals.
  • Fast Switching Speeds: Suitable for high-frequency applications.
  • Low Input Capacitance: Reduces drive requirements.
  • Pb-Free & RoHS Compliant: Environmentally friendly.
  • Reliable Performance: Optimized for general-purpose switching.

This MOSFET is commonly used in battery-powered circuits, load switching, signal amplification, and logic-level conversion applications.

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