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The 2N7002K-T1-GE3 is a N-channel MOSFET manufactured by VISHAY. Below are its key specifications, descriptions, and features:

Specifications:

• Drain-Source Voltage (VDS): 60V
• Gate-Source Voltage (VGS): ±20V
• Continuous Drain Current (ID): 115mA
• Pulsed Drain Current (IDM): 800mA
• Power Dissipation (PD): 200mW
• On-Resistance (RDS(on)): 5Ω (max) @ VGS = 10V, ID = 50mA
• Threshold Voltage (VGS(th)): 1V (min), 2.5V (max)
• Input Capacitance (Ciss): 50pF (typical)
• Output Capacitance (Coss): 10pF (typical)
• Reverse Transfer Capacitance (Crss): 5pF (typical)
• Turn-On Delay Time (td(on)): 10ns (typical)
• Turn-Off Delay Time (td(off)): 30ns (typical)
• Operating Temperature Range: -55°C to +150°C

Description:

The 2N7002K-T1-GE3 is a small-signal MOSFET designed for low-power switching applications. It is housed in a SOT-23 package, making it suitable for space-constrained designs.

Features:

• Low Threshold Voltage: Ensures compatibility with logic-level signals.
• Fast Switching Speeds: Suitable for high-frequency applications.
• Low Input Capacitance: Reduces drive requirements.
• Pb-Free & RoHS Compliant: Environmentally friendly.
• Reliable Performance: Optimized for general-purpose switching.

This MOSFET is commonly used in battery-powered circuits, load switching, signal amplification, and logic-level conversion applications.

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