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IRF840PBF Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
IRF840PBFVISHAY12000Yes

500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

The IRF840PBF is a power MOSFET manufactured by Vishay. Below are its key specifications, descriptions, and features:

Specifications:

  • Manufacturer: Vishay
  • Part Number: IRF840PBF
  • Transistor Type: N-Channel MOSFET
  • Drain-Source Voltage (VDSS): 500V
  • Continuous Drain Current (ID): 8A @ 25°C
  • Pulsed Drain Current (IDM): 32A
  • Gate-Source Voltage (VGS): ±20V
  • Power Dissipation (PD): 125W @ 25°C
  • On-Resistance (RDS(on)): 0.85Ω @ VGS = 10V
  • Threshold Voltage (VGS(th)): 2V to 4V
  • Input Capacitance (Ciss): 1200pF
  • Output Capacitance (Coss): 300pF
  • Reverse Transfer Capacitance (Crss): 100pF
  • Turn-On Delay Time (td(on)): 10ns
  • Rise Time (tr): 30ns
  • Turn-Off Delay Time (td(off)): 55ns
  • Fall Time (tf): 20ns
  • Operating Temperature Range: -55°C to +150°C
  • Package: TO-220AB

Description:

The IRF840PBF is a high-voltage N-channel MOSFET designed for high-speed switching applications. It offers low on-resistance and fast switching performance, making it suitable for power supplies, motor control, and other high-voltage applications.

Features:

  • High Voltage Capability (500V)
  • Low On-Resistance (RDS(on))
  • Fast Switching Speed
  • Avalanche Energy Specified
  • Improved dv/dt Capability
  • Lead-Free and RoHS Compliant

This information is based on Vishay's datasheet for the IRF840PBF.

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