Professional IC Distribution & Technical Solutions

The SI2301CDS-T1-E3 is a P-channel MOSFET manufactured by Vishay. Below are its key specifications, descriptions, and features:

Specifications:

• Manufacturer: Vishay
• Type: P-Channel MOSFET
• Drain-Source Voltage (VDS): -20V
• Gate-Source Voltage (VGS): ±8V
• Continuous Drain Current (ID): -2.7A
• Power Dissipation (PD): 1.25W
• On-Resistance (RDS(on)): 85mΩ @ VGS = -4.5V
• Threshold Voltage (VGS(th)): -1V (typical)
• Package: SOT-23 (TO-236AB)
• Operating Temperature Range: -55°C to +150°C

Descriptions:

• The SI2301CDS-T1-E3 is a small-signal P-channel MOSFET designed for low-voltage applications.
• It is optimized for high-efficiency switching and power management in portable electronics, battery protection circuits, and load switching.
• The device features low on-resistance and fast switching characteristics.

Features:

• Low On-Resistance (RDS(on)): Ensures minimal power loss.
• Compact SOT-23 Package: Ideal for space-constrained designs.
• Fast Switching Speed: Suitable for high-frequency applications.
• Lead (Pb)-Free & RoHS Compliant: Environmentally friendly.
• AEC-Q101 Qualified: Meets automotive reliability standards.

This MOSFET is commonly used in power management, DC-DC converters, and battery protection circuits.