Professional IC Distribution & Technical Solutions

The SI2301DS-T1-E3 is a P-channel MOSFET manufactured by VISHAY. Below are the factual specifications, descriptions, and features of the component:

Specifications:

• Manufacturer: VISHAY
• Type: P-Channel MOSFET
• Package: SOT-23 (TO-236AB)
• Drain-Source Voltage (V_DSS): -20V
• Gate-Source Voltage (V_GS): ±8V
• Continuous Drain Current (I_D): -2.7A
• Pulsed Drain Current (I_DM): -10A
• On-Resistance (R_DS(ON)): 85mΩ @ V_GS = -4.5V
• Power Dissipation (P_D): 1.25W
• Operating Junction Temperature (T_J): -55°C to +150°C
• Threshold Voltage (V_GS(th)): -0.4V to -1.5V

Descriptions:

• The SI2301DS-T1-E3 is a P-channel enhancement-mode MOSFET designed for low-voltage, high-speed switching applications.
• It is housed in a compact SOT-23 package, making it suitable for space-constrained designs.
• Optimized for low on-resistance and high current handling in power management circuits.

Features:

• Low Threshold Voltage for efficient switching.
• High-Speed Switching performance.
• Low On-Resistance (R_DS(ON)) for reduced conduction losses.
• Lead-Free & RoHS Compliant for environmental safety.
• AEC-Q101 Qualified for automotive applications.

This information is based on VISHAY's official datasheet for the SI2301DS-T1-E3. For detailed performance curves and application notes, refer to the manufacturer's documentation.