Professional IC Distribution & Technical Solutions

The SI3457BDV-T1-E3 is a P-channel MOSFET manufactured by Vishay. Below are its key specifications, descriptions, and features:

Specifications:

• Manufacturer: Vishay
• Part Number: SI3457BDV-T1-E3
• Type: P-Channel MOSFET
• Technology: TrenchFET® Gen III
• Drain-Source Voltage (VDS): -30V
• Gate-Source Voltage (VGS): ±20V
• Continuous Drain Current (ID): -5.5A
• Pulsed Drain Current (IDM): -22A
• On-Resistance (RDS(ON)): 40mΩ @ VGS = -10V, 50mΩ @ VGS = -4.5V
• Power Dissipation (PD): 2.5W
• Operating Temperature Range: -55°C to +150°C
• Package: PowerPAK® SC-70 (SOT-323)

Features:

• Low On-Resistance: Optimized for high-efficiency power management.
• TrenchFET® Gen III Technology: Enhances switching performance and reduces conduction losses.
• Small Footprint: SC-70 package saves board space.
• AEC-Q101 Qualified: Suitable for automotive applications.
• Lead-Free & RoHS Compliant: Environmentally friendly.

Applications:

• Power management in portable devices
• Load switching
• Battery protection circuits
• DC-DC converters

This MOSFET is designed for high-performance, low-voltage applications requiring efficient power handling in a compact form factor.

*(Note: Always refer to the official Vishay datasheet for detailed technical and application-specific information.)*