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SI3457BDV-T1-E3 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
SI3457BDV-T1-E3VISHAY1110Yes

SI3457BDV-T1-E3** is a P-channel MOSFET manufactured by **Vishay**.

The SI3457BDV-T1-E3 is a P-channel MOSFET manufactured by Vishay. Below are its key specifications, descriptions, and features:

Specifications:

  • Manufacturer: Vishay
  • Part Number: SI3457BDV-T1-E3
  • Type: P-Channel MOSFET
  • Technology: TrenchFET® Gen III
  • Drain-Source Voltage (VDS): -30V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): -5.5A
  • Pulsed Drain Current (IDM): -22A
  • On-Resistance (RDS(ON)): 40mΩ @ VGS = -10V, 50mΩ @ VGS = -4.5V
  • Power Dissipation (PD): 2.5W
  • Operating Temperature Range: -55°C to +150°C
  • Package: PowerPAK® SC-70 (SOT-323)

Features:

  • Low On-Resistance: Optimized for high-efficiency power management.
  • TrenchFET® Gen III Technology: Enhances switching performance and reduces conduction losses.
  • Small Footprint: SC-70 package saves board space.
  • AEC-Q101 Qualified: Suitable for automotive applications.
  • Lead-Free & RoHS Compliant: Environmentally friendly.

Applications:

  • Power management in portable devices
  • Load switching
  • Battery protection circuits
  • DC-DC converters

This MOSFET is designed for high-performance, low-voltage applications requiring efficient power handling in a compact form factor.

*(Note: Always refer to the official Vishay datasheet for detailed technical and application-specific information.)*

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