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SI4894DY-T1 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
SI4894DY-T1VISHAY2500Yes

SI4894DY-T1** is a power MOSFET manufactured by **VISHAY**.

The SI4894DY-T1 is a power MOSFET manufactured by VISHAY. Below are its key specifications, descriptions, and features:

Specifications:

  • Manufacturer: VISHAY
  • Type: N-Channel Power MOSFET
  • Package: SO-8
  • Drain-Source Voltage (VDSS): 30V
  • Continuous Drain Current (ID): 8.5A
  • Pulsed Drain Current (IDM): 34A
  • RDS(ON) (Max): 0.022Ω @ VGS = 10V
  • Gate-Source Voltage (VGS): ±20V
  • Power Dissipation (PD): 2.5W
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

The SI4894DY-T1 is a high-performance N-Channel MOSFET designed for power management applications. It features low on-resistance (RDS(ON)) and fast switching characteristics, making it suitable for DC-DC converters, motor control, and load switching circuits.

Features:

  • Low RDS(ON) for reduced conduction losses
  • High current handling capability
  • Fast switching speed
  • Enhanced thermal performance
  • RoHS compliant

This MOSFET is commonly used in power supply designs, battery management systems, and automotive applications.

(Note: Always refer to the official datasheet for detailed electrical characteristics and application guidelines.)

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