Professional IC Distribution & Technical Solutions

The Si3430DV-T1-GE3 is a P-Channel MOSFET manufactured by Vishay. Below are its key specifications, descriptions, and features:

Specifications:

• Manufacturer: Vishay
• Part Number: Si3430DV-T1-GE3
• Type: P-Channel MOSFET
• Technology: Silicon (Si)
• Drain-Source Voltage (V_DSS): -30 V
• Gate-Source Voltage (V_GS): ±20 V
• Continuous Drain Current (I_D): -5.7 A
• Pulsed Drain Current (I_DM): -20 A
• Power Dissipation (P_D): 2.5 W
• On-Resistance (R_DS(on)): 50 mΩ (max) at V_GS = -10 V
• Threshold Voltage (V_GS(th)): -1 V to -3 V
• Package: PowerPAK® SO-8
• Operating Temperature Range: -55°C to +150°C

Descriptions:

• Designed for high-efficiency power management in applications requiring low on-resistance and fast switching.
• Suitable for DC-DC converters, load switches, and battery management systems.
• Features enhanced thermal performance due to the PowerPAK® SO-8 package.

Features:

• Low On-Resistance (R_DS(on)) for reduced conduction losses.
• Fast Switching Speed for improved efficiency in high-frequency applications.
• Avalanche Energy Rated for ruggedness in demanding conditions.
• Lead (Pb)-Free & RoHS Compliant for environmental safety.
• Optimized for Low Gate Drive Requirements (V_GS = -4.5 V or -10 V).

This MOSFET is commonly used in portable electronics, power supplies, and automotive applications.

(Note: Always refer to the official Vishay datasheet for detailed electrical characteristics and application guidelines.)