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2N7002TA Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2N7002TAZETEX3000Yes

2N7002TA** is a N-channel enhancement mode MOSFET manufactured by **ZETEX** (now part of **Diodes Incorporated**).

The 2N7002TA is a N-channel enhancement mode MOSFET manufactured by ZETEX (now part of Diodes Incorporated). Below are the factual specifications, descriptions, and features:

Specifications:

  • Drain-Source Voltage (VDS): 60V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): 115mA
  • Pulsed Drain Current (IDM): 800mA
  • Power Dissipation (PD): 200mW
  • Threshold Voltage (VGS(th)): 0.8V to 3.0V
  • On-Resistance (RDS(on)): 5Ω (max) at VGS = 10V
  • Input Capacitance (Ciss): 50pF (typical)
  • Output Capacitance (Coss): 15pF (typical)
  • Reverse Transfer Capacitance (Crss): 10pF (typical)
  • Operating Temperature Range: -55°C to +150°C

Package:

  • SOT-23 (TO-236AB) (3-pin surface-mount package)

Descriptions:

  • The 2N7002TA is a small-signal MOSFET designed for low-voltage switching applications.
  • It is an enhancement-mode device, meaning it requires a positive gate-source voltage to turn on.
  • Suitable for general-purpose switching in low-power circuits.

Features:

  • Low threshold voltage for compatibility with logic-level signals.
  • Fast switching speed.
  • High input impedance.
  • ESD protection (up to 2kV).
  • RoHS compliant.

This MOSFET is commonly used in applications such as load switching, signal routing, and low-power DC-DC converters.

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