Professional IC Distribution & Technical Solutions

Global leader in semiconductor components distribution and technical support services, empowering your product innovation and industry advancement

Product Catalog Contact Us
Home > others010 > SA576D

SA576D Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
SA576DSINGENT145Yes

SA576D** is a semiconductor component manufactured by **SINGENT**.

The SA576D is a semiconductor component manufactured by SINGENT. Below are its specifications, descriptions, and features:

Specifications:

  • Manufacturer: SINGENT
  • Type: Schottky Barrier Diode
  • Package: SOD-123 (Surface Mount)
  • Maximum Reverse Voltage (VR): 40V
  • Average Forward Current (IF): 1A
  • Peak Forward Surge Current (IFSM): 30A
  • Forward Voltage Drop (VF): 0.55V (typical at 1A)
  • Reverse Leakage Current (IR): 0.5mA (max at rated voltage)
  • Operating Temperature Range: -55°C to +125°C

Descriptions:

The SA576D is a high-efficiency Schottky barrier diode designed for low-power loss and high-speed switching applications. It is commonly used in power supply circuits, reverse polarity protection, and DC-DC converters.

Features:

  • Low Forward Voltage Drop – Enhances efficiency in power applications.
  • Fast Switching Speed – Suitable for high-frequency circuits.
  • High Surge Current Capability – Ensures reliability under transient conditions.
  • Compact SOD-123 Package – Ideal for space-constrained PCB designs.
  • RoHS Compliant – Meets environmental standards.

For detailed application notes and reliability data, refer to the official SINGENT datasheet.

Request Quotation

Part Number:
Quantity:
Target Price($USD):
Email:
Contact Person:
Additional Part Number
Quantity (Additional)
Special Requirements
Verification: =

Recommended Products

  • PB5350 ,420,SOT223

    PB5350** is a power bank manufactured by **Anker**.

  • UPC3403G2-T1(MS) ,1983,SOP14

    UPC3403G2-T1(MS)** is a high-frequency, low-noise amplifier (LNA) manufactured by **MEC (Mitsubishi Electric Corporation)**.

  • PFU1N60 ,480,TO251

    PFU1N60** is an N-channel MOSFET manufactured by various semiconductor companies.

  • UC3770AN,UC,14,DIP16

    AD1981BJST,AD,14,TQFP

Sales Support

Our sales team is ready to assist with:

  • Fast quotation
  • Price Discount
  • Technical specifications
Contact sales