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SP5618P Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
SP5618PSPT199Yes

SP5618P** is a power MOSFET manufactured by **SPT (Semiconductor Power Technology)**.

The SP5618P is a power MOSFET manufactured by SPT (Semiconductor Power Technology). Below are the factual specifications, descriptions, and features of the component:

Specifications:

  • Type: N-Channel MOSFET
  • Drain-Source Voltage (VDSS): 60V
  • Continuous Drain Current (ID): 18A
  • Pulsed Drain Current (IDM): 72A
  • Gate-Source Voltage (VGS): ±20V
  • Power Dissipation (PD): 50W
  • On-Resistance (RDS(on)): 0.028Ω (max) @ VGS = 10V
  • Threshold Voltage (VGS(th)): 2V (min) – 4V (max)
  • Input Capacitance (Ciss): 1100pF (typical)
  • Output Capacitance (Coss): 300pF (typical)
  • Reverse Transfer Capacitance (Crss): 80pF (typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package: TO-220

Description:

The SP5618P is a high-performance N-channel MOSFET designed for power switching applications. It offers low on-resistance and fast switching characteristics, making it suitable for DC-DC converters, motor control, and power management circuits.

Features:

  • Low RDS(on) for reduced conduction losses
  • High current handling capability
  • Fast switching speed
  • Improved thermal performance
  • Robust and reliable TO-220 package
  • Suitable for high-efficiency power applications

This information is based on the manufacturer's datasheet for the SP5618P by SPT. For detailed application notes and performance curves, refer to the official documentation.

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