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SVF4N65M Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
SVF4N65M485Yes

SVF4N65M** is a power MOSFET manufactured by **Silicon Valley Microelectronics (SVM)**.

The SVF4N65M is a power MOSFET manufactured by Silicon Valley Microelectronics (SVM). Below are its key specifications, descriptions, and features:

Specifications:

  • Drain-Source Voltage (VDSS): 650V
  • Continuous Drain Current (ID): 4A
  • Pulsed Drain Current (IDM): 16A
  • Power Dissipation (PD): 45W
  • Gate-Source Voltage (VGS): ±30V
  • On-Resistance (RDS(on)): 2.5Ω (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 3V (min), 5V (max)
  • Input Capacitance (Ciss): 300pF (typ)
  • Output Capacitance (Coss): 50pF (typ)
  • Reverse Transfer Capacitance (Crss): 10pF (typ)
  • Turn-On Delay Time (td(on)): 15ns (typ)
  • Turn-Off Delay Time (td(off)): 60ns (typ)
  • Operating Temperature Range: -55°C to +150°C

Description:

The SVF4N65M is an N-channel enhancement-mode power MOSFET designed for high-voltage, high-speed switching applications. It features low on-resistance, fast switching performance, and high ruggedness, making it suitable for power supplies, inverters, motor control, and other power management systems.

Features:

  • High Voltage Capability (650V)
  • Low On-Resistance (RDS(on))
  • Fast Switching Speed
  • Low Gate Charge
  • Improved dv/dt Capability
  • Avalanche Energy Specified
  • Lead-Free & RoHS Compliant

The device is available in a TO-220F package for efficient thermal dissipation.

(Note: Always refer to the official datasheet for the most accurate and detailed specifications.)

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