Antiuav chips and transistor

Professional IC Distribution & Technical Solutions

Global leader in semiconductor components distribution and technical support services, empowering your product innovation and industry advancement

Product Catalog Contact Us

SI2301DS-T1 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumber	Manufactor	Quantity	Availability
SI2301DS-T1	SILICONIX	2764	Yes

SI2301DS-T1 is a P-channel MOSFET manufactured by SIRLICONIX.

The SI2301DS-T1 is a P-channel MOSFET manufactured by SIRLICONIX.

Specifications:

Drain-Source Voltage (V_DS): -20V
Gate-Source Voltage (V_GS): ±12V
Continuous Drain Current (I_D): -3.1A
Power Dissipation (P_D): 1.25W
On-Resistance (R_DS(on)): 85mΩ @ V_GS = -4.5V
Threshold Voltage (V_GS(th)): -1V (typical)
Operating Temperature Range: -55°C to +150°C

Descriptions & Features:

Package: SOT-23 (3-pin)
Technology: Advanced Trench MOSFET
Low On-Resistance: Enhances efficiency in power applications
Fast Switching Speed: Suitable for high-frequency switching circuits
Low Gate Charge: Reduces drive power requirements
RoHS Compliant: Meets environmental standards

This MOSFET is commonly used in power management, load switching, and DC-DC conversion applications.

Request Quotation

Do not fill this field:

Part Number:
Quantity:
Target Price($USD):
Email:
Contact Person:
Additional Part Number
Quantity (Additional)
Special Requirements

Verification: =

Recommended Products

BCM4212KQL ,2879,LQFP100
BCM4212KQL** is a high-performance Ethernet transceiver manufactured by **Broadcom**.
DIL-CL-1A81-9-15M ,193,DIP4
part **DIL-CL-1A81-9-15M** is manufactured by **MEDER**.
CL1318 ,193,DIP8
Manufacturer:** Bourns **Part Number:** CL1318 ### **Specifications:** - **Type:** Inductor - **Inductance:** 1.
TD3420AP,TOSHIBA,50,DIP14
TD3437AP,TOSHIBA,50,DIP14

Sales Support

Our sales team is ready to assist with:

Fast quotation
Price Discount
Technical specifications

Contact sales