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L2N7002SLT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
L2N7002SLT1GLRC5900Yes

L2N7002SLT1G** is a dual N-channel enhancement mode field-effect transistor (FET) manufactured by **ON Semiconductor (LRC)**.

The L2N7002SLT1G is a dual N-channel enhancement mode field-effect transistor (FET) manufactured by ON Semiconductor (LRC).

Key Specifications:

  • Configuration: Dual N-Channel
  • Drain-Source Voltage (VDSS): 60V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): 115mA per channel
  • Total Power Dissipation (PD): 200mW
  • On-Resistance (RDS(on)): 5Ω (max) at VGS = 10V, ID = 50mA
  • Threshold Voltage (VGS(th)): 1V to 2.5V
  • Input Capacitance (Ciss): 15pF (typical)
  • Output Capacitance (Coss): 5pF (typical)
  • Reverse Transfer Capacitance (Crss): 2pF (typical)
  • Switching Speed: Fast switching capability
  • Package: SOT-363 (SC-88)

Descriptions & Features:

  • Low Threshold Voltage: Suitable for low-voltage applications.
  • Compact Package: Small footprint for space-constrained designs.
  • Low Input Capacitance: Enhances high-speed switching performance.
  • ESD Protection: Robust against electrostatic discharge.
  • Applications: Used in signal switching, load switching, and low-power amplification circuits.

This device is optimized for general-purpose switching and amplification in portable and low-power electronics.

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