Professional IC Distribution & Technical Solutions

Global leader in semiconductor components distribution and technical support services, empowering your product innovation and industry advancement

Product Catalog Contact Us
Home > others012 > MJD122T4G

MJD122T4G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MJD122T4GONSEMI13150Yes

MJD122T4G is a power transistor manufactured by ONSEMI.

The MJD122T4G is a power transistor manufactured by ONSEMI. Below are its specifications, descriptions, and features:

Specifications:

  • Manufacturer: ONSEMI
  • Type: NPN Bipolar Junction Transistor (BJT)
  • Package: DPAK (TO-252)
  • Collector-Emitter Voltage (VCEO): 100V
  • Collector Current (IC): 8A (continuous)
  • Power Dissipation (PD): 36W
  • DC Current Gain (hFE): 30 to 250 (at IC = 3A, VCE = 4V)
  • Collector-Emitter Saturation Voltage (VCE(sat)): 1.5V (max) at IC = 8A, IB = 0.8A
  • Transition Frequency (fT): 3MHz (typical)
  • Operating Temperature Range: -65°C to +150°C

Description:

The MJD122T4G is a high-voltage, high-current NPN transistor designed for power switching and amplification applications. It is housed in a DPAK (TO-252) surface-mount package, making it suitable for compact and efficient PCB designs.

Features:

  • High current capability (8A continuous)
  • Low collector-emitter saturation voltage
  • High DC current gain
  • Suitable for power switching and linear amplification
  • Surface-mount package for space-saving designs

This transistor is commonly used in power supplies, motor control, and other high-power switching applications.

(Note: Always refer to the official datasheet for detailed electrical characteristics and application guidelines.)

Request Quotation

Part Number:
Quantity:
Target Price($USD):
Email:
Contact Person:
Additional Part Number
Quantity (Additional)
Special Requirements
Verification: =

Recommended Products

  • CC0603KRX7R8BB104 ,79512,0603ECCN: EAR99

    Manufacturer:** YAGEO **Part Number:** CC0603KRX7R8BB104 ### **Specifications:** - **Capacitance:** 0.

  • BAS16(5D) ,18000,17/18

    BAS16(5D) is a high-speed switching diode manufactured by CJ (Changjiang Electronics Tech Co.

  • LESD5Z3.3T1G ,60000,SOD-523

    LESD5Z3.

  • ADG608BRU,AD,72,TSSOP

    S9S08DZ60CLH,FREESCAL,72,QFP

Sales Support

Our sales team is ready to assist with:

  • Fast quotation
  • Price Discount
  • Technical specifications
Contact sales