The NRVB120VLSFT1G is a Schottky Barrier Diode (SBD) manufactured by ON Semiconductor. Below are its key specifications, descriptions, and features:
Specifications:
- Manufacturer: ON Semiconductor
- Part Number: NRVB120VLSFT1G
- Diode Type: Schottky Barrier Diode
- Voltage Rating (VRRM): 120V
- Average Forward Current (IF(AV)): 1A
- Peak Forward Surge Current (IFSM): 30A (non-repetitive)
- Forward Voltage Drop (VF): 0.95V (typical at 1A)
- Reverse Leakage Current (IR): 100µA (max at 120V)
- Operating Junction Temperature (TJ): -65°C to +125°C
- Package: SOD-123FL
Descriptions:
- Designed for high-efficiency rectification in low-voltage, high-frequency applications.
- Features a low forward voltage drop for reduced power loss.
- Suitable for switching power supplies, DC-DC converters, and reverse polarity protection circuits.
Features:
- Low Forward Voltage: Enhances efficiency in power-sensitive applications.
- High Surge Current Capability: Ensures reliability under transient conditions.
- Fast Switching Speed: Ideal for high-frequency circuits.
- Lead-Free & RoHS Compliant: Meets environmental standards.
- Compact SOD-123FL Package: Space-saving surface-mount design.
For detailed technical information, refer to the official ON Semiconductor datasheet.