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NTR1P02T1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
NTR1P02T1GONSEMI11970Yes

NTR1P02T1G** is a P-channel MOSFET manufactured by **ON Semiconductor**.

The NTR1P02T1G is a P-channel MOSFET manufactured by ON Semiconductor.

Specifications:

  • Type: P-Channel MOSFET
  • Drain-Source Voltage (VDS): -20V
  • Gate-Source Voltage (VGS): ±8V
  • Continuous Drain Current (ID): -1.7A
  • Pulsed Drain Current (IDM): -6.8A
  • Power Dissipation (PD): 1.4W
  • On-Resistance (RDS(on)): 170mΩ @ VGS = -4.5V
  • Threshold Voltage (VGS(th)): -0.4V to -1V
  • Package: SOT-23 (3-pin)

Descriptions:

The NTR1P02T1G is a small-signal P-channel MOSFET designed for low-voltage applications. It is optimized for high efficiency and fast switching performance in power management circuits.

Features:

  • Low on-resistance (RDS(on))
  • Fast switching speed
  • Small SOT-23 package for space-constrained designs
  • Suitable for battery-powered and portable applications
  • RoHS compliant

This MOSFET is commonly used in load switching, power management, and DC-DC conversion applications.

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