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QRE1113GR Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
QRE1113GRONSEMI 10000Yes

Reflective Object Sensor

The QRE1113GR is a reflective object sensor manufactured by ON Semiconductor.

Specifications:

  • Type: Reflective Optical Sensor with Phototransistor Output
  • Operating Wavelength: 950 nm (Infrared)
  • Sensing Distance: Up to a few millimeters (depends on reflectivity)
  • Output Type: Phototransistor (open collector)
  • Supply Voltage (VCC): 5V (typical)
  • Current Consumption: ~20 mA (LED forward current)
  • Package: 4-Pin Gull Wing (SMD)
  • Operating Temperature Range: -40°C to +85°C

Descriptions:

The QRE1113GR consists of an infrared LED and a phototransistor in a single package. It detects the presence or absence of reflective surfaces by emitting IR light and measuring the reflected intensity. The output phototransistor conducts based on the received light, allowing it to interface with digital circuits.

Features:

  • Compact surface-mount package
  • High sensitivity for reflective object detection
  • Fast response time
  • Reliable performance in various lighting conditions
  • Suitable for applications like line-following robots, encoders, and object detection

For detailed electrical characteristics and mechanical dimensions, refer to the official ON Semiconductor datasheet.

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