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BC847CLT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BC847CLT1GONSEMI16410Yes

BC847CLT1G** is a general-purpose NPN bipolar junction transistor (BJT) manufactured by **ON Semiconductor**.

The BC847CLT1G is a general-purpose NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. Below are its specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN
  • Collector-Emitter Voltage (VCEO): 45V
  • Collector-Base Voltage (VCBO): 50V
  • Emitter-Base Voltage (VEBO): 6V
  • Continuous Collector Current (IC): 100mA
  • Total Power Dissipation (PD): 250mW
  • DC Current Gain (hFE): 420 to 800 (at IC = 2mA, VCE = 5V)
  • Transition Frequency (fT): 100MHz
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-23 (3-Lead)

Descriptions:

  • The BC847CLT1G is a small-signal transistor designed for general-purpose amplification and switching applications.
  • It is part of the BC847 series, which is optimized for low noise and high gain.
  • Suitable for use in consumer electronics, industrial controls, and communication devices.

Features:

  • High current gain (hFE) for improved signal amplification.
  • Low noise performance, making it ideal for audio and RF applications.
  • Compact SOT-23 package for space-constrained designs.
  • RoHS compliant and lead-free.

This transistor is commonly used in amplifiers, signal processing circuits, and switching applications.

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