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FHB772P-RE Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
FHB772P-RESAMPLE110Yes

FHB772P-RE is a high-performance, low-loss Schottky barrier diode manufactured by **ROHM Semiconductor**.

The FHB772P-RE is a high-performance, low-loss Schottky barrier diode manufactured by ROHM Semiconductor.

Key Specifications:

  • Type: Schottky Barrier Diode
  • Package: TO-277 (SMPC)
  • Maximum Reverse Voltage (VR): 60V
  • Average Forward Current (IO): 7A
  • Peak Forward Surge Current (IFSM): 100A
  • Forward Voltage (VF): 0.49V (typ) @ 3.5A
  • Reverse Leakage Current (IR): 100µA (max) @ 60V
  • Operating Temperature Range: -55°C to +150°C

Features:

  • Low Forward Voltage (VF) for improved efficiency
  • High Surge Current Capability (100A)
  • Low Reverse Leakage Current
  • High-Speed Switching performance
  • AEC-Q101 Qualified (for automotive applications)
  • Lead-Free & RoHS Compliant

Applications:

  • Power supply circuits
  • DC-DC converters
  • Reverse polarity protection
  • Automotive systems

This diode is designed for high-efficiency power applications where low voltage drop and fast switching are critical.

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