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MJD32CT4G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MJD32CT4GONSEMI19942Yes

MJD32CT4G is an NPN Darlington transistor manufactured by ONSEMI.

The MJD32CT4G is an NPN Darlington transistor manufactured by ONSEMI. Below are its specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN Darlington
  • Collector-Emitter Voltage (VCE): 100V
  • Collector-Base Voltage (VCB): 100V
  • Emitter-Base Voltage (VEB): 5V
  • Continuous Collector Current (IC): 3A
  • Power Dissipation (PD): 20W
  • DC Current Gain (hFE): 1000 (min) at IC = 2A
  • Operating Junction Temperature (TJ): -65°C to +150°C
  • Package Type: DPAK (TO-252)

Descriptions:

The MJD32CT4G is a high-voltage, high-current NPN Darlington transistor designed for general-purpose amplifier and switching applications. It features a built-in base-emitter resistor for improved performance and stability. The device is housed in a DPAK (TO-252) surface-mount package, making it suitable for compact PCB designs.

Features:

  • High DC current gain (hFE ≥ 1000)
  • Low saturation voltage
  • Built-in base-emitter resistor
  • High-voltage capability (100V)
  • Surface-mount DPAK package for space-saving designs
  • Suitable for switching and amplification applications

This information is based on ONSEMI's official datasheet for the MJD32CT4G.

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