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TPC8012-H Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
TPC8012-HTPC230Yes

TPC8012-H** is a power MOSFET manufactured by **TPC (Toshiba Products Corporation)**.

The TPC8012-H is a power MOSFET manufactured by TPC (Toshiba Products Corporation). Below are the factual specifications, descriptions, and features of the component:

Specifications:

  • Type: N-Channel MOSFET
  • Drain-Source Voltage (VDSS): 30V
  • Continuous Drain Current (ID): 60A
  • Pulsed Drain Current (IDM): 240A
  • Power Dissipation (PD): 79W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(ON)): 3.5mΩ (max) @ VGS = 10V
  • Threshold Voltage (VGS(th)): 1.0V (min) – 2.5V (max)
  • Input Capacitance (Ciss): 2000pF (typ)
  • Output Capacitance (Coss): 600pF (typ)
  • Reverse Transfer Capacitance (Crss): 200pF (typ)
  • Turn-On Delay Time (td(on)): 15ns (typ)
  • Turn-Off Delay Time (td(off)): 40ns (typ)
  • Operating Temperature Range: -55°C to +175°C
  • Package: TO-220

Descriptions:

  • The TPC8012-H is a high-performance N-Channel MOSFET designed for power switching applications.
  • It offers low on-resistance and high current handling capability, making it suitable for DC-DC converters, motor control, and power management circuits.
  • The device is optimized for fast switching performance with minimal power loss.

Features:

  • Low RDS(ON): Ensures high efficiency in power applications.
  • High Current Capability: Supports up to 60A continuous drain current.
  • Fast Switching Speed: Minimizes switching losses.
  • Robust Thermal Performance: TO-220 package provides effective heat dissipation.
  • Wide Operating Temperature Range: Suitable for harsh environments.

For detailed application notes or reliability data, refer to the official TPC datasheet.

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