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NT1609D Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
NT1609DHIGHLIGHT650Yes

Manufacturer:** HIGHLIGHT **Part Number:** NT1609D ### **Specifications:** - **Type:** NPN Transistor - **Package:** TO-92 - **Collector-Emitter Voltage (VCEO):** 60V - **Collector-Base Voltage (VCBO):** 60V - **Emitter-Base Voltage (VEB

Manufacturer: HIGHLIGHT

Part Number: NT1609D

Specifications:

  • Type: NPN Transistor
  • Package: TO-92
  • Collector-Emitter Voltage (VCEO): 60V
  • Collector-Base Voltage (VCBO): 60V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 1A
  • Power Dissipation (PD): 625mW
  • DC Current Gain (hFE): 100-300
  • Transition Frequency (fT): 150MHz
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

The NT1609D is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a high current gain and moderate switching speed, making it suitable for low-power circuits.

Features:

  • High current gain (hFE) range
  • Low saturation voltage
  • Suitable for small-signal amplification
  • Compact TO-92 package for easy PCB mounting
  • RoHS compliant

This transistor is commonly used in audio amplifiers, signal processing, and switching circuits.

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