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BSP350E6327(Q67000S227) Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BSP350E6327(Q67000S227)INFIN456Yes

BSP350E6327 (Q67000S227)** is a P-channel enhancement mode MOSFET manufactured by **Infineon Technologies (INFIN)**.

The BSP350E6327 (Q67000S227) is a P-channel enhancement mode MOSFET manufactured by Infineon Technologies (INFIN). Below are the factual specifications, descriptions, and features:

Key Specifications:

  • Type: P-Channel Enhancement Mode MOSFET
  • Drain-Source Voltage (VDS): -20V
  • Gate-Source Voltage (VGS): ±12V
  • Continuous Drain Current (ID): -4.3A
  • Power Dissipation (PD): 1.4W
  • On-Resistance (RDS(on)): 70mΩ (max) at VGS = -4.5V
  • Threshold Voltage (VGS(th)): -0.8V to -2V
  • Package: SOT-223

Descriptions:

  • Designed for low-voltage, high-efficiency power switching applications.
  • Suitable for load switching, power management, and DC-DC conversion.
  • Low gate charge and fast switching characteristics.

Features:

  • Low On-Resistance: Ensures minimal power loss.
  • Fast Switching Speed: Enhances efficiency in high-frequency applications.
  • High Current Capability: Supports up to -4.3A continuous drain current.
  • Compact Package: SOT-223 for space-constrained designs.
  • AEC-Q101 Qualified: Suitable for automotive applications (if applicable).

This MOSFET is commonly used in power supplies, battery management, and motor control circuits. For detailed electrical characteristics, refer to the official Infineon datasheet.

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