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NTS4001NT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
NTS4001NT1GONSEMI18000Yes

NTS4001NT1G** is a PNP bipolar junction transistor (BJT) manufactured by **ON Semiconductor**.

The NTS4001NT1G is a PNP bipolar junction transistor (BJT) manufactured by ON Semiconductor.

Key Specifications:

  • Transistor Type: PNP
  • Collector-Emitter Voltage (VCE): -40V
  • Collector-Base Voltage (VCB): -40V
  • Emitter-Base Voltage (VEB): -5V
  • Collector Current (IC): -200mA
  • Power Dissipation (PD): 225mW
  • DC Current Gain (hFE): 100–300 (at IC = -10mA, VCE = -1V)
  • Transition Frequency (fT): 250MHz
  • Package: SOT-23 (SC-59)

Descriptions & Features:

  • Designed for general-purpose amplification and switching applications.
  • High current gain with low saturation voltage.
  • Suitable for low-power applications.
  • RoHS compliant and lead-free.

This transistor is commonly used in signal amplification, switching circuits, and other low-power electronic applications.

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