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UPI3055AS Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
UPI3055ASUNIVERSE506Yes

Manufacturer:** UNIVERSE **Part Number:** UPI3055AS ### **Specifications:** - **Type:** Power MOSFET - **Technology:** N-Channel - **Drain-Source Voltage (VDS):** 60V - **Continuous Drain Current (ID):** 30A - **Pulsed Drain Current (IDM

Manufacturer: UNIVERSE

Part Number: UPI3055AS

Specifications:

  • Type: Power MOSFET
  • Technology: N-Channel
  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current (ID): 30A
  • Pulsed Drain Current (IDM): 120A
  • Power Dissipation (PD): 75W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(ON)): 20mΩ (at VGS = 10V)
  • Threshold Voltage (VGS(th)): 2V (typical)
  • Input Capacitance (Ciss): 1600pF
  • Output Capacitance (Coss): 600pF
  • Reverse Transfer Capacitance (Crss): 100pF
  • Operating Temperature Range: -55°C to +150°C
  • Package: TO-220

Descriptions:

The UPI3055AS is an N-Channel power MOSFET designed for high-efficiency switching and power management applications. It offers low on-resistance and fast switching speeds, making it suitable for power supplies, motor control, and DC-DC converters.

Features:

  • Low on-resistance for reduced conduction losses
  • Fast switching performance
  • High current handling capability
  • Robust thermal performance
  • Avalanche energy specified
  • Suitable for high-power applications

This MOSFET is commonly used in automotive, industrial, and consumer electronics applications.

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