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L8050QLT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumber	Manufactor	Quantity	Availability
L8050QLT1G	LRC	28760	Yes

L8050QLT1G is a general-purpose NPN bipolar junction transistor (BJT) manufactured by LRC (Leshan Radio Company)**.

The L8050QLT1G is a general-purpose NPN bipolar junction transistor (BJT) manufactured by LRC (Leshan Radio Company).

Key Specifications:

Transistor Type: NPN
Package: SOT-23
Collector-Base Voltage (V_CB): 30V
Collector-Emitter Voltage (V_CE): 20V
Emitter-Base Voltage (V_EB): 5V
Collector Current (I_C): 500mA
Power Dissipation (P_D): 225mW
DC Current Gain (h_FE): 120-400 (typical)
Transition Frequency (f_T): 150MHz (typical)

Descriptions & Features:

Designed for general-purpose amplification and switching applications.
High current gain with low saturation voltage.
Suitable for low-power and high-speed switching circuits.
Compact SOT-23 package for space-constrained applications.

For exact performance characteristics, refer to the official LRC datasheet.

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