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NTR4502PT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
NTR4502PT1GONSEMI40229Yes

NTR4502PT1G** is a **P-Channel MOSFET** manufactured by **ON Semiconductor**.

The NTR4502PT1G is a P-Channel MOSFET manufactured by ON Semiconductor.

Specifications:

  • Type: P-Channel Enhancement Mode MOSFET
  • Drain-Source Voltage (VDS): -30V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): -5.5A
  • Pulsed Drain Current (IDM): -22A
  • Power Dissipation (PD): 2.5W
  • On-Resistance (RDS(on)): 45mΩ @ VGS = -10V
  • Threshold Voltage (VGS(th)): -1V to -3V
  • Package: SOT-223 (4-Pin)
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

The NTR4502PT1G is designed for low-voltage, high-efficiency switching applications. It features low on-resistance and fast switching speeds, making it suitable for power management in portable electronics, battery protection, and DC-DC converters.

Features:

  • Low RDS(on) for reduced conduction losses
  • Fast switching performance
  • Compact SOT-223 package for space-constrained designs
  • AEC-Q101 qualified for automotive applications
  • Pb-free and RoHS compliant

This MOSFET is optimized for high-efficiency power switching in various electronic circuits.

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