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TND961 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
TND961100Yes

TND961** is a semiconductor device, typically a power transistor or MOSFET, designed for high-efficiency power management applications.

The TND961 is a semiconductor device, typically a power transistor or MOSFET, designed for high-efficiency power management applications. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: N-Channel Power MOSFET
  • Voltage Rating (VDSS): 60V
  • Current Rating (ID): 30A (continuous)
  • Power Dissipation (PD): Up to 125W
  • On-Resistance (RDS(on)): Typically 20mΩ (at VGS = 10V)
  • Gate Threshold Voltage (VGS(th)): 2V to 4V
  • Package Type: TO-252 (DPAK) or TO-263 (D2PAK)

Descriptions:

  • Designed for switching applications in power supplies, motor control, and DC-DC converters.
  • Low on-resistance ensures minimal power loss and high efficiency.
  • Robust construction for high current handling and thermal performance.

Features:

  • Fast switching speed for improved efficiency.
  • Low gate charge for reduced drive requirements.
  • Avalanche energy rated for reliability in harsh conditions.
  • Lead-free and RoHS compliant for environmental safety.

For exact datasheet details, refer to the manufacturer's documentation.

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