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H4002DG Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
H4002DGMNC206Yes

H4002DG** is a high-voltage, high-speed power MOSFET manufactured by **MNC (Microsemi Corporation)**.

The H4002DG is a high-voltage, high-speed power MOSFET manufactured by MNC (Microsemi Corporation). Below are the factual specifications, descriptions, and features:

Specifications:

  • Voltage Rating (VDS): 400V
  • Current Rating (ID): 4A (continuous)
  • Power Dissipation (PD): 40W
  • Gate Threshold Voltage (VGS(th)): 2V to 4V
  • On-Resistance (RDS(on)): 1.5Ω (max)
  • Input Capacitance (Ciss): 150pF (typical)
  • Switching Speed: Fast (designed for high-speed applications)
  • Package: TO-220 (through-hole)

Descriptions:

  • The H4002DG is a N-channel enhancement-mode MOSFET optimized for high-voltage switching applications.
  • It is commonly used in power supplies, inverters, motor control, and high-efficiency switching circuits.
  • Features low gate charge and fast switching characteristics, making it suitable for high-frequency applications.

Features:

  • High voltage capability (400V)
  • Low on-resistance for reduced conduction losses
  • Fast switching performance
  • Avalanche energy rated for ruggedness
  • TO-220 package for easy mounting and heat dissipation

This MOSFET is designed for industrial, automotive, and power management applications where high efficiency and reliability are critical.

*(Note: Always refer to the official datasheet for precise technical details and application guidelines.)*

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