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S8550H(SOT-23)(Β=200~350)【三极管代号:2TY】 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
S8550H(SOT-23)(Β=200~350)【三极管代号:2TY】CJ769000Yes

Part Number:** S8550H (SOT-23) (Β=200~350) **Transistor Code:** 2TY **Manufacturer:** CJ ### **Specifications:** - **Type:** PNP Bipolar Junction Transistor (BJT) - **Package:** SOT-23 (Small Outline Transistor) - **Current Gain (hFE / Β):*

Part Number: S8550H (SOT-23) (Β=200~350)

Transistor Code: 2TY

Manufacturer: CJ

Specifications:

  • Type: PNP Bipolar Junction Transistor (BJT)
  • Package: SOT-23 (Small Outline Transistor)
  • Current Gain (hFE / Β): 200 to 350
  • Collector-Emitter Voltage (VCEO): -25V
  • Collector-Base Voltage (VCBO): -40V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -500mA (max)
  • Power Dissipation (PD): 300mW (max)
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

The S8550H is a general-purpose PNP transistor in a compact SOT-23 package, suitable for amplification and switching applications. It features a moderate current gain (β) range of 200–350 and is commonly used in low-power circuits.

Features:

  • High current gain (hFE) for improved signal amplification
  • Compact SOT-23 package for space-constrained designs
  • Low saturation voltage for efficient switching
  • RoHS compliant

(Note: Always verify datasheet details for exact application conditions.)

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