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BAV99LT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BAV99LT1GONSEMI339000Yes

Monolithic Dual Switching Diode

The BAV99LT1G is a high-speed switching diode array manufactured by ON Semiconductor.

Specifications:

  • Configuration: Dual Series
  • Diode Type: Silicon Switching Diode
  • Maximum Reverse Voltage (VR): 70V
  • Forward Current (IF): 200mA (per diode)
  • Peak Forward Surge Current (IFSM): 500mA (non-repetitive)
  • Forward Voltage (VF): 1V (at 10mA)
  • Reverse Recovery Time (trr): 4ns (typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-23 (3-Lead)

Descriptions:

The BAV99LT1G consists of two high-speed switching diodes connected in series within a compact SOT-23 package. It is designed for high-speed switching applications, offering fast recovery times and low leakage current.

Features:

  • High-Speed Switching (4ns typical reverse recovery time)
  • Low Leakage Current
  • Small Footprint (SOT-23 package)
  • High Reliability
  • AEC-Q101 Qualified (for automotive applications)

This diode array is commonly used in high-frequency rectification, signal switching, and protection circuits in consumer electronics, automotive systems, and communication devices.

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