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BC846BLT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BC846BLT1GONSEMI118014Yes

BC846BLT1G** is a general-purpose NPN bipolar junction transistor (BJT) manufactured by **ON Semiconductor**.

The BC846BLT1G is a general-purpose NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor.

Specifications:

  • Transistor Type: NPN
  • Collector-Emitter Voltage (VCE): 65 V
  • Collector-Base Voltage (VCB): 80 V
  • Emitter-Base Voltage (VEB): 6 V
  • Collector Current (IC): 100 mA
  • Power Dissipation (PD): 300 mW
  • DC Current Gain (hFE): 200–450 (at IC = 2 mA, VCE = 5 V)
  • Transition Frequency (fT): 100 MHz
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-23 (3-Lead)

Descriptions:

The BC846BLT1G is a small-signal transistor designed for amplification and switching applications. It is part of ON Semiconductor’s BC846 series, which offers high current gain and low noise performance.

Features:

  • High current gain (hFE)
  • Low noise
  • Pb-free and RoHS compliant
  • Suitable for surface-mount applications
  • Designed for general-purpose amplification and switching

This transistor is commonly used in audio amplifiers, signal processing, and low-power switching circuits.

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