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FDV303N Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
FDV303NONSEMI118043Yes

Digital FET, N-Channel

The FDV303N is an N-channel MOSFET manufactured by ON Semiconductor. Below are its key specifications, descriptions, and features:

Specifications:

  • Drain-Source Voltage (VDS): 25V
  • Continuous Drain Current (ID): 0.7A
  • Pulsed Drain Current (IDM): 2.8A
  • Gate-Source Voltage (VGS): ±12V
  • On-Resistance (RDS(on)): 1.5Ω (max) at VGS = 4.5V
  • Power Dissipation (PD): 0.35W
  • Threshold Voltage (VGS(th)): 0.5V to 1.5V
  • Operating Junction Temperature (TJ): -55°C to +150°C
  • Package Type: SOT-23

Descriptions:

  • The FDV303N is a small-signal MOSFET designed for low-voltage, low-current applications.
  • It is optimized for switching and amplification in portable electronics, battery management, and signal processing.

Features:

  • Low Threshold Voltage: Enables operation with low gate drive voltages.
  • Fast Switching Speed: Suitable for high-frequency applications.
  • Low On-Resistance: Enhances efficiency in power applications.
  • Compact SOT-23 Package: Ideal for space-constrained designs.
  • Pb-Free and RoHS Compliant: Meets environmental standards.

For detailed electrical characteristics and application notes, refer to the official ON Semiconductor datasheet.

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