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2SB911M Specifications

Detailed technical information and Application Scenarios

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PartNumberManufactorQuantityAvailability
2SB911M800Yes

2SB911M** is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications.

The 2SB911M is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Below are its key specifications, descriptions, and features:

Manufacturer Specifications:

  • Transistor Type: PNP
  • Maximum Collector-Base Voltage (VCBO): -50V
  • Maximum Collector-Emitter Voltage (VCEO): -50V
  • Maximum Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -3A
  • Power Dissipation (PD): 25W
  • DC Current Gain (hFE): 60 to 320 (varies by operating conditions)
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: TO-220

Descriptions:

  • Designed for medium-power applications in amplifiers, regulators, and switching circuits.
  • Suitable for both linear and switching operations.
  • Features low saturation voltage for efficient performance.

Features:

  • High current capability (up to 3A).
  • Low collector-emitter saturation voltage for improved efficiency.
  • TO-220 package for easy mounting and heat dissipation.
  • Wide range of DC current gain (hFE) for flexible circuit design.

This transistor is commonly used in power supply circuits, motor control, and audio amplification. Always refer to the datasheet for detailed operating conditions.

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