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IXTA52P10P Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
IXTA52P10PIXYS 3000Yes

IXTA52P10P** is a power MOSFET manufactured by **IXYS**.

The IXTA52P10P is a power MOSFET manufactured by IXYS. Below are its key specifications, descriptions, and features:

Specifications:

  • Manufacturer: IXYS
  • Type: N-Channel Power MOSFET
  • Drain-Source Voltage (VDSS): 100V
  • Continuous Drain Current (ID): 52A
  • Pulsed Drain Current (IDM): 208A
  • Power Dissipation (PD): 300W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 0.025Ω (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 2V (min) - 4V (max)
  • Input Capacitance (Ciss): 3000pF (typ)
  • Output Capacitance (Coss): 700pF (typ)
  • Reverse Transfer Capacitance (Crss): 100pF (typ)
  • Package: TO-247

Descriptions:

  • The IXTA52P10P is a high-performance N-Channel MOSFET designed for power switching applications.
  • It features low on-resistance (RDS(on)) and high current handling capability, making it suitable for high-efficiency power conversion.
  • The device is optimized for fast switching and low conduction losses in applications such as motor drives, power supplies, and inverters.

Features:

  • High current capability (52A continuous, 208A pulsed)
  • Low RDS(on) for reduced conduction losses
  • Fast switching performance
  • High power dissipation (300W)
  • Robust TO-247 package for efficient thermal management
  • Suitable for high-voltage (100V) applications

This MOSFET is commonly used in switching regulators, DC-DC converters, motor control, and industrial power systems.

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