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MT29F4G08ABADAWP:D Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MT29F4G08ABADAWP:DMICRON 770Yes

Manufacturer:** Micron Technology, Inc.

Manufacturer: Micron Technology, Inc.

Part Number: MT29F4G08ABADAWP

Specifications:

  • Memory Type: NAND Flash
  • Density: 4Gb (512MB)
  • Interface: Asynchronous
  • Organization:
  • Page Size: 4KB + 224B spare
  • Block Size: 256KB (64 pages per block)
  • Plane Size: 2 planes
  • Device Width: 8-bit
  • Voltage Supply:
  • VCC: 2.7V - 3.6V
  • Speed:
  • tRC (Random Read Cycle Time): 25ns (max)
  • tWC (Write Cycle Time): 30ns (max)
  • Endurance:
  • 100,000 program/erase cycles (typical)
  • Data Retention:
  • 10 years (at 40°C)
  • Package:
  • 48-pin TSOP (Thin Small Outline Package)

Descriptions:

The MT29F4G08ABADAWP is a 4Gb (512MB) NAND Flash memory device from Micron, designed for high-performance, low-power applications. It features an asynchronous interface and supports advanced error correction (ECC) for reliable data storage.

Features:

  • Asynchronous NAND Flash with 8-bit I/O
  • On-Die ECC (Error Correction Code) for improved data integrity
  • Multi-Level Cell (MLC) Technology for higher density
  • Page Program Time: 300µs (typical)
  • Block Erase Time: 1.5ms (typical)
  • Partial Page Programming: Supported
  • Hardware Data Protection: Write-protect pin for security
  • Operating Temperature Range:
  • Commercial: 0°C to +70°C
  • Industrial: -40°C to +85°C

This NAND Flash is commonly used in embedded systems, consumer electronics, and industrial applications requiring reliable non-volatile storage.

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