Professional IC Distribution & Technical Solutions

Global leader in semiconductor components distribution and technical support services, empowering your product innovation and industry advancement

Product Catalog Contact Us
Home > others08 > 4N35

4N35 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
4N35MOTO/LITE965Yes

4N35 is an optocoupler manufactured by Toshiba.

The 4N35 is an optocoupler manufactured by Toshiba. It consists of a gallium arsenide infrared LED and a silicon phototransistor. Key specifications include:

  • Isolation Voltage: 5300 Vrms
  • Collector-Emitter Voltage (VCEO): 30 V
  • Collector Current (IC): 100 mA
  • Current Transfer Ratio (CTR): Minimum 100% at 10 mA input current
  • Input Forward Current (IF): 60 mA (maximum)
  • Forward Voltage (VF): 1.5 V (typical) at 10 mA
  • Operating Temperature Range: -55°C to +100°C
  • Package: 6-pin DIP (Dual In-line Package)

The 4N35 is commonly used for signal isolation, switching, and interfacing in various electronic applications.

Request Quotation

Part Number:
Quantity:
Target Price($USD):
Email:
Contact Person:
Additional Part Number
Quantity (Additional)
Special Requirements
Verification: =

Recommended Products

  • MA3830 ,100,

    Manufacturer:** Micro Analog Systems (MAS) **Part Number:** MA3830 ### **Specifications:** - **Type:** Low-power, high-efficiency DC-DC step-down (buck) converter - **Input Voltage Range:** 3.

  • STRF6501 ,100,

    STRF6501 is a power MOSFET transistor manufactured by STMicroelectronics.

  • SDA5640 ,100,DIP14

    SDA5640** is a component manufactured by **SIEMENS**.

  • HD61105,HIT,34,QFP

    TDA3611,PHI,34,DIP24

Sales Support

Our sales team is ready to assist with:

  • Fast quotation
  • Price Discount
  • Technical specifications
Contact sales