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3DD13003 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
3DD13003CJ27000Yes

3DD13003** is a high-voltage NPN bipolar junction transistor (BJT) manufactured by **CJ (Changjiang Electronics Tech Co.

The 3DD13003 is a high-voltage NPN bipolar junction transistor (BJT) manufactured by CJ (Changjiang Electronics Tech Co., Ltd.).

Specifications:

  • Transistor Type: NPN
  • Collector-Emitter Voltage (VCE): 400V
  • Collector-Base Voltage (VCB): 500V
  • Emitter-Base Voltage (VEB): 9V
  • Collector Current (IC): 1.5A
  • Power Dissipation (Ptot): 25W
  • DC Current Gain (hFE): 8-40
  • Transition Frequency (fT): 5MHz
  • Operating Temperature Range: -55°C to +150°C
  • Package: TO-126

Descriptions:

The 3DD13003 is a high-voltage switching transistor commonly used in power supply circuits, inverters, and electronic ballasts. It is designed for medium-power applications requiring high breakdown voltage and fast switching speeds.

Features:

  • High voltage capability
  • Fast switching speed
  • Low saturation voltage
  • Robust construction for reliable performance
  • Suitable for switching and amplification applications

This transistor is often used as a replacement for similar devices like the MJE13003 in power supply designs.

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