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PU4510 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
PU4510100Yes

PU4510** is a power MOSFET transistor manufactured by **Infineon Technologies**.

The PU4510 is a power MOSFET transistor manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

Manufacturer:

Infineon Technologies

Specifications:

  • Type: N-Channel Power MOSFET
  • Drain-Source Voltage (VDS): 100V
  • Continuous Drain Current (ID): 45A
  • Pulsed Drain Current (IDM): 180A
  • Power Dissipation (PD): 300W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 10mΩ (at VGS = 10V)
  • Threshold Voltage (VGS(th)): 2V (min) - 4V (max)
  • Input Capacitance (Ciss): 3000pF
  • Output Capacitance (Coss): 600pF
  • Reverse Transfer Capacitance (Crss): 100pF
  • Switching Speed: Fast switching capability
  • Package: TO-247

Description:

The PU4510 is a high-performance N-Channel MOSFET designed for power switching applications. It offers low on-resistance and high current handling, making it suitable for high-efficiency power conversion, motor control, and industrial applications.

Features:

  • Low on-resistance (RDS(on)) for reduced conduction losses
  • High current capability (45A continuous, 180A pulsed)
  • Fast switching performance
  • Robust and reliable construction
  • Suitable for high-power applications
  • TO-247 package for efficient heat dissipation

This information is based on Infineon’s datasheet for the PU4510 MOSFET. For detailed performance curves and application notes, refer to the official datasheet.

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