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AO4600 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
AO4600ALPHA463Yes

AO4600 is a dual N-channel MOSFET manufactured by ALPHA & OMEGA Semiconductor.

The AO4600 is a dual N-channel MOSFET manufactured by ALPHA & OMEGA Semiconductor. Below are the factual specifications, descriptions, and features:

Specifications:

  • Manufacturer: ALPHA & OMEGA Semiconductor
  • Configuration: Dual N-Channel MOSFET
  • Drain-Source Voltage (VDS): 30V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): 6.5A per MOSFET
  • Pulsed Drain Current (IDM): 20A per MOSFET
  • On-Resistance (RDS(ON)):
  • 28mΩ (max) @ VGS = 10V
  • 34mΩ (max) @ VGS = 4.5V
  • Power Dissipation (PD): 2W per MOSFET
  • Operating Junction Temperature (TJ): -55°C to +150°C
  • Package: SOIC-8

Descriptions:

  • The AO4600 integrates two high-performance N-channel MOSFETs in a single SOIC-8 package.
  • Designed for high-efficiency power management applications.
  • Suitable for synchronous buck converters, load switches, and motor control.

Features:

  • Low on-resistance (RDS(ON)) for reduced conduction losses.
  • Fast switching performance.
  • Optimized for high-frequency switching applications.
  • Lead-free and RoHS compliant.

This information is based solely on manufacturer-provided datasheets. For detailed application guidelines, refer to the official ALPHA & OMEGA Semiconductor documentation.

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