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CS1N60A1H Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
CS1N60A1HCS216Yes

CS1N60A1H** is a power MOSFET manufactured by **CS Semiconductor**.

The CS1N60A1H is a power MOSFET manufactured by CS Semiconductor. Below are the factual specifications, descriptions, and features of the component:

Specifications:

  • Type: N-Channel MOSFET
  • Drain-Source Voltage (VDSS): 600V
  • Continuous Drain Current (ID): 1.4A
  • Pulsed Drain Current (IDM): 5.6A
  • Power Dissipation (PD): 20W
  • Gate-Source Voltage (VGS): ±30V
  • On-Resistance (RDS(on)): 5.5Ω (max) @ VGS = 10V
  • Threshold Voltage (VGS(th)): 2.0V – 4.0V
  • Input Capacitance (Ciss): 150pF (typ)
  • Output Capacitance (Coss): 25pF (typ)
  • Reverse Transfer Capacitance (Crss): 7pF (typ)
  • Turn-On Delay Time (td(on)): 10ns (typ)
  • Turn-Off Delay Time (td(off)): 30ns (typ)
  • Operating Temperature Range: -55°C to +150°C
  • Package: TO-92

Descriptions:

  • The CS1N60A1H is a high-voltage N-channel MOSFET designed for switching applications.
  • It features low gate charge and fast switching performance, making it suitable for power management circuits.
  • The TO-92 package provides a compact and cost-effective solution for low-power applications.

Features:

  • High Voltage Capability (600V)
  • Low On-Resistance
  • Fast Switching Speed
  • Low Gate Charge
  • Avalanche Energy Specified
  • Lead-Free & RoHS Compliant

This information is based on the manufacturer's datasheet and technical documentation. For detailed application notes and reliability data, refer to the official CS Semiconductor datasheet.

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